AFM-Multi Platform System
Systems
AFM-Multi Platform System
Modular multi-platform UHV system
Quick Specifications
Type
Multi-Platform UHV System
Operating Environment
UHV & Atmospheric
Base Pressure
< 10⁻¹⁰ mbar
Sample Capacity
Up to 2″
Chamber Configuration
Modular, Expandable
Sample Transfer
Load-lock Compatible
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About this product

The AFM-MPS is a Multi-Platform System capable of combining AFM, AES, iXPS, one source for depth profiling, load-lock for transferring samples from/to the glove box under a protective atmosphere, and a second chamber (e.g. for magnetron coating or thermal evaporation). The primary, analytical chamber with AFM is mounted on the rigid frame put on the Gimbal Piston vibration isolation. If the vibrations in the lab are too high for passive vibration isolation, it is possible to mount the frame of the analytical chamber on an active vibration isolation floor platform or on active vibration isolation piezoelectric actuators, too. The second chamber can be mounted on a separate rigid frame. Both chambers can be connected by means of special flexible bellows that compensate for forces caused by pressure differences. The sample transfer rod can be mounted to the secondary chamber in order to minimize the vibrational influence on the primary chamber. The sample size can be up to 2″. This modular chamber architecture enables advanced correlative nanoscale fabrication and surface analysis workflows within a single flexible system.

AFM-Multi Platform System
  • Large sample capability – sample diameter up to 2″.
  • The tool helps in the future development of the electronic devices based on single- or few dopant-QDs .
  • In conventional EBID in the Scanning Electron Microscope (SEM), the primary electron beam (typically >500V) interacts with the substrate and generates backscattered electrons and low energy secondary electrons, which in combination determine the resolution.
  • Based on a “top down” Field-Emission Scanning Probe Lithography (FE-SPL) approach, the realization of control gates and readout SET structures becomes a realistic goal.
  • Our FE-SPL is used for fabrication of Single electron transistors (SETS), which make possible the control of quantum transport through a zero-dimensional island, source and drain, and gate electrodes.
  • Fast switching between electron-field emission from the tip and non-contact AFM imaging greatly facilitates analysis of the deposits. A further important advantage is that the placement of the deposits is determined with very high positioning accuracy using the AFM navigation and fabrication of the EBID features.
Atomic Force Microscopy (AFM) – ultra compact with active-cantilever
Auger Electron Spectroscopy (AES)
Photoelectron Spectroscopy using X-rays (XPS)
Electron Energy Loss Spectroscopy (EELS) / REELS
Advanced optical imaging
Scanning Electron Microscopy
Depth profiling
Single ion implantation (SII)
Field emission scanning probe lithography (FE-SPL)
Tip-based Electron Beam Induced Deposition (TB-EBID)
PVD – thin-film deposition: Sputtering & Thermal evaporation
AFM/SPL/SDL head
Core scanning and lithography module
XYZ Scanning Stage Non magnetic, closed loop
Range 60µm x 60µm x 20µm
Resonant frequencies X,Y=750Hz; Z=2000Hz
XYZ Positioner Range X,Y,Z=15mm
Accuracy 3 nm
Position noise X,Y=0.4nm; Z=0.2nm

Standard measurement techniques:

  • Real Non-Contact AFM
  • Contact AFM
  • Phase Imaging AFM
  • Intermittent Non-Contact AFM
  • Conductive AFM
  • I-V Spectroscopy
  • Kelvin Probe Force Microscopy (KPFM)
  • Scanning Capacitance Microscopy (SCM)
  • Scanning Spreading Resistance Microscopy (SSRM)
AES / XPS analyser
DESA 150
Staib Instruments
Resolution at 1000 eV dE < 1 eV (FWHM)
Resolution XPS (300W Mg, Ag 3d 5/2) < 0.89 eV (FWHM)
Energy range 0 eV to 2500 eV
Acceptance angle 6% of 2Π
Detection Channeltron type electron multiplier
Integrated electron source model Model EK-5IK
Beam energy 20 eV to 5 keV
Minimum Spot size at 5 keV < 100 μm
Beam current max. 20 μA
Source control NEK-050

Data acquisition

  • WinspectroS multitasking package (Windows 7, 8, 10)
  • VAMAS conform data files
  • AUGER, ELS, XPS supported
  • Optional: SEM, SAM, UPS, ISS, SEM/SAM
DUO-5-S.C.
Ion Source tab for depth profiling and sample cleaning
Staib instruments
Energy range 500 eV to 5 keV
Minimum beam diameter 50 μm
Working pressure (chamber) 6 x 10-8 – 1 x 10-5 mbar
Working pressure (ion gun) 1 x 10-4 – 1 x 10-3 mbar
Working distance 10 – 125 mm
Filament cold cathode
Gases Argon, Xenon, O2, H2
Bakeout temperature 200° C
Features Differential pumping, Emission current control
X-Ray Source System
Mg/Al dual anode X-ray source package
Power 300W
Anode Al / Mg
Window Al
Water cooling Approx. 3.5 l/minute
Security interlock High voltage and water cooling
Differential pumping Optional (pumps not included)
Cooling circuit Suggested: water cooler and flow switch
Z Translator 100 mm
HV Unit 120V or 240V 50/60H
Emission control 100V-240V 50/60Hz