The AFM-SDL system combines Atomic Force Microscopy (AFM) with ion beam technologies for Single Dopant Lithography (SDL). The platform enables deterministic Single-Ion Implantation (SII), allowing individual dopant atoms to be placed with high spatial accuracy. Applications include quantum devices, atomistic electronics, qubits, and nitrogen-vacancy (NV) centers in diamond.
The integration of a scanning probe with an ion beam acts as a “dynamic nano-stencil” for aligned dopant implantation. High-resolution non-destructive AFM imaging enables precise navigation and positioning with sub-10 nm accuracy during implantation processes.
Enabling atomistic and quantum electronics: The future development of beyond-CMOS electronic devices is scheduled to be based on single- or few dopant-QDs. The capability to precisely position every single dopant atom is a fundamental step to enable the path to the future atomistic and quantum electronics. The development of an accessible quantum computer has emerged as a premiere challenge for the development of completely novel approaches in nanofabrication and nanotechnology in the last decade. Spins of electrons and nuclei of dopant atoms embedded in silicon are promising quantum qubit candidates.
The AFM-SDL platform is based on our compact AFMinSEM system and supports high-speed non-contact AFM imaging with atomic resolution under high-vacuum conditions. Designed as an add-on module, the system can interoperate with multiple ion beam technologies including:
▶️ Focused ion beam (FIB) systems (e.g. using liquid metal ion sources)
▶️ High-brightness ion sources
▶️ Cooled ion systems
▶️ Broad beam, low-brightness ion source and beam transport systems
Donor atoms can be implanted into silicon or diamond substrates.
Watch the Single-Ion Implantation (SII) process in our YouTube video
The AFM-SDL platform also supports Tip-Based Electron Beam Induced Deposition (TB-EBID) and FE-SPL, enabling fabrication of control gates and readout structures for qubit device architectures.
TB-EBID is a direct-write nanofabrication technique based on low-energy electrons (<75 eV) field-emitted from the tip of an active cantilever. Operating in the single-digit nanometer regime, TB-EBID enables the fabrication of nanoscale structures for advanced nanoelectronic and single-electron devices. The same probe is used for electron emission, AFM navigation, and imaging. Fast switching between electron-field emission and non-contact AFM imaging enables efficient analysis of deposited structures, while AFM-based positioning ensures highly accurate placement of deposited features.
The combination of high-precision AFM positioning, dynamic sub-5 nm stencil functionality, deterministic single-ion implantation, and the ability to detect single ion impact, enables advanced atomistic fabrication workflows for next-generation quantum devices. This technique has been already implemented by several groups in Germany, USA and Australia.
