EFRE 21-27 Project – Parallel Cantilever-AFM

As semiconductor technology advances, the size of structures decreases, and so does the size of defects that affect performance and production yield. These defects, known as Defects of Interest (DOI), become harder to analyze as they shrink. To effectively analyze them, non-destructive methods capable of capturing defects in three dimensions with high resolution—down to a few nanometers—are required. To address this, combined defect testing using Automated Optical Inspection (AOI) for defect detection and Automated Defect Review with Atomic Force Microscopy (ADR-AFM) for classification has become the standard. For this process to work, an inline measurement method is needed to align the AOI defect maps with the wafer’s exact position during ADR-AFM. However, to avoid slowing down production, the speed of AFM measurements must significantly improve to keep up with throughput demands.

The project aims to develop a high-precision surface measurement system for fast, subnanometer-level inspection of wafers. This is intended to be realized by the development of a completely new type of self-reading parallel cantilever. This system will enable large-area, random defect analysis in the semiconductor industry—something not previously possible. By facilitating inline or parallel quality assurance during production, the system will support the industrial use of nm-range lithography technologies in wafer manufacturing.

The project funded by the federal state of Thuringia received co-financing under the European Regional Development Fund (EFRE) by the European Union.